Comprehensive Characterization of Nitrogen-Doped Zinc Oxide Thin Films Produced by Metalorganic Chemical Vapour Deposition (MOCVD)

The synthesis and characterization of various wide band gap metal oxides nanostructures and thin films has continued to attract great interest due to their size, morphology-related properties, and their emerging applications in novel functional devices. Recently, research and development of alternative energy technologies, such as low cost flat-panel solar cells thin film devices, and many other innovative concepts have increased. ZnO is an important multifunctional material which has received great attention during the last few years due to their unique applications in all fields of human endeavor. There is ever-increased focus on its application in microelectronic and optoelectronic devices, and for self-assembled growth of three-dimensional nanoscale and thin film systems.

Zinc oxide having a direct band gap of 3.37 eV and an exciton binding energy (60 eV) higher than those of ZnS (20eV) and GaN (21eV), is of interest for various high tech applications, such as optical devices, solar cells, piezoelectric devices, varistors, surface acoustic wave (SAW) devices, and gas sensors. Zinc oxide nanostructures have the potential to significantly improve the performance and durability of certain devices used in areas of importance: energy production and homeland security. There is also another vital class of properties of ZnO nano and micro structures, its tribology; but these will be dealt with in another discourse.

ZnO can be easily doped to n-type, but is difficult to dope to p-type. With all the highlighted critical factors in view, the present work is based on the seamless production of p-type nitrogen-doped zinc oxide thin films through metalorganic chemical vapour deposition (MOCVD), and their comprehensive characterization. This is envisaged to project further, the versatility of ZnO on the science and technology domain.